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LT1260IN DTA115T LT1260IN 1206H 6481P ZD04V7 1A66B UPD65882
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  page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures complimen t ary to s 901 5 marking : j 6 maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ector - ba s e v o l t age v cbo 5 0 v col l ector - emitter v o l t age v ce o 4 5 v emitter - base v o l t a g e v ebo 5 v col l ector cur re n t - conti n u o us i c 0 . 1 a col l ector p o w e r dissi p a t i on p c 0. 2 w juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parame t e r symbol t est c o n d iti on s m in t yp m ax u nit collector - base breakd o w n v o l t age v cbo i c = 10 0 a, i e =0 50 v collector - emitter bre a kd o w n v ol t age v ceo i c = 0.1ma, i b =0 45 v emitter - ba s e breakd o w n v o l t age v ebo i e = 10 0 a, i c =0 5 v collector cut - off current i cbo v cb =50 v , i e =0 0.1 a collector cut - off current i ceo v ce = 35v , i b =0 0.1 emitter cut - off current i ebo v eb = 3v , i c =0 0.1 dc cur r ent gain h fe v ce = 5 v , i c = 1 ma 200 10 0 0 collecto r - emitter satu r ation v o l t age v ce (sat) i c = 100 ma, i b = 5ma 0.3 v ba s e - emitt e r sat u rati o n v o l t a g e v be (sat) i c = 100 ma, i b = 5ma 1 v t r a n s ition fr e qu e n c y f t v ce = 5 v , i c = 1 0ma f= 30mhz 150 mhz class ification of h fe rank l h range 2 00 - 450 450 - 1000 ( npn ) 1. base 2. emitter sot - 23 3. collecto u a u a u S9014
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. typical characteristics S9014


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